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Conference Presentation PreJuSER-41137
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Influence of layer structure and surface passivation on performance of AlGaN/GaN HEMTs on Si and SiC substrates

 ;  ;  ;  ;  ;

2003

2003 International Semiconductor Device Research Symposium
Seminar, Washington, DCWashington, DC, 9 Dec 20032003-12-09


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: Nachtrag
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 Record created 2012-11-13, last modified 2018-02-10
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