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Conference Presentation (Invited) PreJuSER-52944
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Material structure and device processing issues related to the AlGaN/GaN HEMT performance



2000

6th International MRS Asia Conference
Seminar, HongkongHongkong, 23 Jul 20002000-07-23


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Schicht- und Ionentechnik (ISI)
Research Program(s):
  1. Halbleiterbauelemente und Analytik (29.88.0)

Appears in the scientific report 2000
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 Record created 2012-11-13, last modified 2017-06-01
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