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@ARTICLE{Hartnagel:1005331,
      author       = {Hartnagel, Paula and Ravi Shankar, Sandheep and Klingebiel,
                      Benjamin and Thimm, Oliver and Kirchartz, Thomas},
      title        = {{C}omparing {M}ethods of {C}haracterizing {E}nergetic
                      {D}isorder in {O}rganic {S}olar {C}ells},
      journal      = {Advanced energy materials},
      volume       = {13},
      number       = {15},
      issn         = {1614-6832},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2023-01440},
      pages        = {2300329},
      year         = {2023},
      abstract     = {The energetic disorder has been known for decades to limit
                      the performance of structurally disordered semiconductors
                      such as amorphous silicon and organic semiconductors.
                      However, in the past years, high-performance organic solar
                      cells have emerged showing a continuously reduced amount of
                      energetic disorder. While searching for future
                      high-efficiency material systems, it is therefore important
                      to correctly characterize this energetic disorder. While
                      there are several techniques in the literature, the most
                      common approaches to probe the density of defect states are
                      using optical excitation as in external quantum efficiency
                      measurements, or sequential filling of the tail states by
                      applying an external voltage as in admittance spectroscopy.
                      A metanalysis of available literature, as well as the
                      experiments using four characterization techniques on two
                      material systems, reveal that electrical, voltage-dependent
                      measurements frequently yield higher values of energetic
                      disorder than optical measurements. With drift-diffusion
                      simulations, it is demonstrated that the approaches probe
                      different energy ranges of the subband-gap density of
                      states. The limitations of the techniques are further
                      explored and it is found that extraction of information from
                      a capacitance-voltage curve can be inhibited by internal
                      series resistance. Thereby, the discrepancies between
                      measurement techniques with sensitivity to different energy
                      ranges and electronic parameters are explained.},
      cin          = {IEK-5},
      ddc          = {050},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000941150600001},
      doi          = {10.1002/aenm.202300329},
      url          = {https://juser.fz-juelich.de/record/1005331},
}