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@ARTICLE{Fomin:1005460,
      author       = {Fomin, Mykola and Pasadas, Francisco. and Marin, Enrique G.
                      and Medina-Rull, Alberto and Ruiz, Francisco. G. and Godoy,
                      Andrés. and Zadorozhnyi, Ihor and Beltramo, Guillermo and
                      Brings, Fabian and Vitusevich, Svetlana and Offenhäusser,
                      Andreas and Kireev, Dmitry},
      title        = {{G}raphene‐on‐{S}ilicon {H}ybrid {F}ield‐{E}ffect
                      {T}ransistors},
      journal      = {Advanced electronic materials},
      volume       = {9},
      number       = {5},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2023-01489},
      pages        = {2201083},
      year         = {2023},
      abstract     = {The combination of graphene and silicon in hybrid
                      electronic devices has attracted increasing attention over
                      the last decade. Here, we present a unique technology of
                      graphene-on-silicon heterostructures as solution-gated
                      transistors for bioelectronics applications. The proposed
                      graphene-on-silicon field-effect transistors (GoSFETs) are
                      fabricated by exploiting various conformations of channel
                      doping and dimensions. The fabricated devices demonstrate
                      hybrid behavior with features specific to both graphene and
                      silicon, which are rationalized via a comprehensive
                      physics-based compact model which is purposely implemented
                      experimentally and proven theoretically. The developed
                      theory corroborates that the device hybrid behavior can be
                      explained in terms of two independent silicon and graphene
                      carrier transport channels, which are, however, strongly
                      electrostatically coupled. Although GoSFET transconductance
                      and carrier mobility are found to be lower than in
                      conventional silicon or graphene field-effect transistors,
                      we observe that the combination of both materials within the
                      hybrid channel contributes uniquely to the electrical
                      response. Specifically, we find that the graphene sheet acts
                      as a shield for the silicon channel, giving rise to a
                      non-uniform potential distribution along it, which impacts
                      the transport, especially at the subthreshold region, due to
                      non-negligible diffusion current.},
      cin          = {IBI-3 / IBI-2},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)IBI-3-20200312 / I:(DE-Juel1)IBI-2-20200312},
      pnm          = {5241 - Molecular Information Processing in Cellular Systems
                      (POF4-524)},
      pid          = {G:(DE-HGF)POF4-5241},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000940681400001},
      doi          = {10.1002/aelm.202201083},
      url          = {https://juser.fz-juelich.de/record/1005460},
}