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@ARTICLE{Jha:1005793,
      author       = {Jha, Neha and Pariyar, Anand and Parvini, Tahereh Sadat and
                      Denker, Christian and Vardhanapu, Pavan K. and Vijaykumar,
                      Gonela and Ahrens, Arne and Meyer, Tobias and Seibt, Michael
                      and Atodiresei, Nicolae and Moodera, Jagadeesh S. and
                      Mandal, Swadhin K. and Münzenberg, Markus},
      title        = {{I}nterface-{A}ssisted {R}oom-{T}emperature
                      {M}agnetoresistance in {C}u-{P}henalenyl-{B}ased {M}agnetic
                      {T}unnel {J}unctions},
      journal      = {ACS applied electronic materials},
      volume       = {5},
      number       = {3},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2023-01638},
      pages        = {1471 - 1477},
      year         = {2023},
      abstract     = {Delocalized carbon-based radical species with unpaired
                      spin, such as the phenalenyl (PLY) radical, have opened
                      avenues for developing multifunctional organic spintronic
                      devices. Using direct laser writing and in situ deposition,
                      we successfully fabricated Cu-PLY- and Zn-PLY-based organic
                      magnetic tunnel junctions (OMTJs) with improved morphology
                      and a reduced junction area of 3 × 8 μm2. The nonlinear
                      and weakly temperature-dependent current–voltage (I–V)
                      characteristics in combination with the low organic barrier
                      height suggest tunneling as the dominant transport mechanism
                      in the structurally and dimensionally optimized OMTJs.
                      Cu-PLY-based OMTJs show significant magnetoresistance up to
                      $14\%$ at room temperature due to the formation of hybrid
                      states at the metal–molecule interfaces called
                      “spinterface”, which reveals the importance of
                      spin-dependent interfacial modification in OMTJs’ design.
                      Additionally, at high bias, in the absence of a magnetic
                      field, OMTJ shows stable voltage-driven resistive switching.
                      Cu-PLY having spin 1/2 with net magnetic moment demonstrates
                      magnetic hardening between the surface molecule at the Co
                      interface and gives rise to stable MR, which suggests its
                      use as a feasible and scalable platform for building
                      molecular-scale quantum memristors and processors.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {5211 - Topological Matter (POF4-521)},
      pid          = {G:(DE-HGF)POF4-5211},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000945886700001},
      doi          = {10.1021/acsaelm.2c01428},
      url          = {https://juser.fz-juelich.de/record/1005793},
}