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001006582 005__ 20230707203359.0
001006582 020__ $$a978-3-95806-692-2
001006582 0247_ $$2datacite_doi$$a10.34734/FZJ-2023-01723
001006582 037__ $$aFZJ-2023-01723
001006582 1001_ $$0P:(DE-Juel1)176125$$aSzyjka, Thomas$$b0$$eCorresponding author
001006582 245__ $$aHAXPES study of interface and bulk chemistry of ferroelectric HfO2 capacitors$$f - 2022-11-18
001006582 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2023
001006582 300__ $$aviii, 120
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001006582 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Information / Information$$v94
001006582 502__ $$aDissertation, Univ. Konstanz, 2022$$bDissertation$$cUniv. Konstanz$$d2022
001006582 520__ $$aHfO2 is the first known ferroelectric material formed from only two elements. The discovery of the ferroelectric properties took place in 2011 in Si-doped HfO2 thin films. This stimulated widespread investigations on the fundamentals and origin of the ferroelectric properties in HfO2 based materials and the exploration of potential applications in the semiconductor industry. The orthorhombic crystal structure in HfO2 has been identified as the ferroelectric phase. This work takes place in the framework of the EU project 3ǫFERRO, which aims to design HfO2 based nonvolatile memory. Here, HfO2 has the role of a dielectric enclosed by two electrodes in a capacitor structure. To achieve the project goals, application-oriented fundamental research is needed to produce optimization options for the ferroelectric materials and interfaces to the electrodes.
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001006582 9141_ $$y2023
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