001     1006582
005     20230707203359.0
020 _ _ |a 978-3-95806-692-2
024 7 _ |a 10.34734/FZJ-2023-01723
|2 datacite_doi
037 _ _ |a FZJ-2023-01723
100 1 _ |a Szyjka, Thomas
|0 P:(DE-Juel1)176125
|b 0
|e Corresponding author
245 _ _ |a HAXPES study of interface and bulk chemistry of ferroelectric HfO2 capacitors
|f - 2022-11-18
260 _ _ |a Jülich
|c 2023
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
300 _ _ |a viii, 120
336 7 _ |a Output Types/Dissertation
|2 DataCite
336 7 _ |a Book
|0 PUB:(DE-HGF)3
|2 PUB:(DE-HGF)
|m book
336 7 _ |a DISSERTATION
|2 ORCID
336 7 _ |a PHDTHESIS
|2 BibTeX
336 7 _ |a Thesis
|0 2
|2 EndNote
336 7 _ |a Dissertation / PhD Thesis
|b phd
|m phd
|0 PUB:(DE-HGF)11
|s 1688726018_20159
|2 PUB:(DE-HGF)
336 7 _ |a doctoralThesis
|2 DRIVER
490 0 _ |a Schriften des Forschungszentrums Jülich Reihe Information / Information
|v 94
502 _ _ |a Dissertation, Univ. Konstanz, 2022
|c Univ. Konstanz
|b Dissertation
|d 2022
520 _ _ |a HfO2 is the first known ferroelectric material formed from only two elements. The discovery of the ferroelectric properties took place in 2011 in Si-doped HfO2 thin films. This stimulated widespread investigations on the fundamentals and origin of the ferroelectric properties in HfO2 based materials and the exploration of potential applications in the semiconductor industry. The orthorhombic crystal structure in HfO2 has been identified as the ferroelectric phase. This work takes place in the framework of the EU project 3ǫFERRO, which aims to design HfO2 based nonvolatile memory. Here, HfO2 has the role of a dielectric enclosed by two electrodes in a capacitor structure. To achieve the project goals, application-oriented fundamental research is needed to produce optimization options for the ferroelectric materials and interfaces to the electrodes.
536 _ _ |a 5211 - Topological Matter (POF4-521)
|0 G:(DE-HGF)POF4-5211
|c POF4-521
|f POF IV
|x 0
856 4 _ |u https://juser.fz-juelich.de/record/1006582/files/Information_94.pdf
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:1006582
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)176125
913 1 _ |a DE-HGF
|b Key Technologies
|l Natural, Artificial and Cognitive Information Processing
|1 G:(DE-HGF)POF4-520
|0 G:(DE-HGF)POF4-521
|3 G:(DE-HGF)POF4
|2 G:(DE-HGF)POF4-500
|4 G:(DE-HGF)POF
|v Quantum Materials
|9 G:(DE-HGF)POF4-5211
|x 0
914 1 _ |y 2023
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a Creative Commons Attribution CC BY 4.0
|0 LIC:(DE-HGF)CCBY4
|2 HGFVOC
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-6-20110106
|k PGI-6
|l Elektronische Eigenschaften
|x 0
980 _ _ |a phd
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a book
980 _ _ |a I:(DE-Juel1)PGI-6-20110106
980 1 _ |a FullTexts


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21