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@ARTICLE{Concepcin:1006632,
      author       = {Concepción, Omar and Søgaard, Nicolaj B. and Bae, Jin-Hee
                      and Yamamoto, Yuji and Tiedemann, Andreas T. and Ikonic,
                      Zoran and Capellini, Giovanni and Zhao, Qing-Tai and
                      Grützmacher, Detlev and Buca, Dan},
      title        = {{I}sothermal {H}eteroepitaxy of {G}e 1– x {S}n x
                      {S}tructures for {E}lectronic and {P}hotonic {A}pplications},
      journal      = {ACS applied electronic materials},
      volume       = {5},
      number       = {4},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2023-01765},
      pages        = {2268–2275},
      year         = {2023},
      abstract     = {Epitaxy of semiconductor-based quantum well structures is a
                      challenging task since it requires precise control of the
                      deposition at the submonolayer scale. In the case of
                      Ge1–xSnx alloys, the growth is particularly demanding
                      since the lattice strain and the process temperature greatly
                      impact the composition of the epitaxial layers. In this
                      paper, the realization of high-quality pseudomorphic
                      Ge1–xSnx layers with Sn content ranging from 6 at. $\%$ up
                      to 15 at. $\%$ using isothermal processes in an
                      industry-compatible reduced-pressure chemical vapor
                      deposition reactor is presented. The epitaxy of Ge1–xSnx
                      layers has been optimized for a standard process offering a
                      high Sn concentration at a large process window. By varying
                      the N2 carrier gas flow, isothermal heterostructure designs
                      suitable for quantum transport and spintronic devices are
                      obtained.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37124237},
      UT           = {WOS:000967269500001},
      doi          = {10.1021/acsaelm.3c00112},
      url          = {https://juser.fz-juelich.de/record/1006632},
}