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@ARTICLE{Cho:1006633,
      author       = {Cho, Deok-Yong and Kim, Ki-jeong and Lee, Kug-Seung and
                      Lübben, Michael and Chen, Shaochuan and Valov, Ilia},
      title        = {{C}hemical {I}nfluence of {C}arbon {I}nterface {L}ayers in
                      {M}etal/{O}xide {R}esistive {S}witches},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {15},
      number       = {14},
      issn         = {1944-8244},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2023-01766},
      pages        = {18528–18536},
      year         = {2023},
      abstract     = {Thin layers introduced between a metal electrode and a
                      solid electrolyte can significantly alter the transport of
                      mass and charge at the interfaces and influence the rate of
                      electrode reactions. C films embedded in functional
                      materials can change the chemical properties of the host,
                      thereby altering the functionality of the whole device.
                      Using X-ray spectroscopies, here we demonstrate that the
                      chemical and electronic structures in a representative
                      redox-based resistive switching (RS) system, Ta2O5/Ta, can
                      be tuned by inserting a graphene or ultrathin amorphous C
                      layer. The results of the orbitalwise analyses of
                      synchrotron Ta L3-edge, C K-edge, and O K-edge X-ray
                      absorption spectroscopy showed that the C layers between
                      Ta2O5 and Ta are significantly oxidized to form COx and, at
                      the same time, oxidize the Ta layers with different degrees
                      of oxidation depending on the distance: full oxidation at
                      the nearest 5 nm Ta and partial oxidation in the next 15 nm
                      Ta. The depth-resolved information on the electronic
                      structure for each layer further revealed a significant
                      modification of the band alignments due to C insertion. Full
                      oxidation of the Ta metal near the C interlayer suggests
                      that the oxygen-vacancy-related valence change memory
                      mechanism for the RS can be suppressed, thereby changing the
                      RS functionalities fundamentally. The knowledge on the
                      origin of C-enhanced surfaces can be applied to other
                      metal/oxide interfaces and used for the advanced design of
                      memristive devices.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {36989142},
      UT           = {WOS:000962869300001},
      doi          = {10.1021/acsami.3c00920},
      url          = {https://juser.fz-juelich.de/record/1006633},
}