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| 001 | 1006633 | ||
| 005 | 20240116084315.0 | ||
| 024 | 7 | _ | |a 10.1021/acsami.3c00920 |2 doi |
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| 100 | 1 | _ | |a Cho, Deok-Yong |0 0000-0001-5789-8286 |b 0 |
| 245 | _ | _ | |a Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches |
| 260 | _ | _ | |a Washington, DC |c 2023 |b Soc. |
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| 520 | _ | _ | |a Thin layers introduced between a metal electrode and a solid electrolyte can significantly alter the transport of mass and charge at the interfaces and influence the rate of electrode reactions. C films embedded in functional materials can change the chemical properties of the host, thereby altering the functionality of the whole device. Using X-ray spectroscopies, here we demonstrate that the chemical and electronic structures in a representative redox-based resistive switching (RS) system, Ta2O5/Ta, can be tuned by inserting a graphene or ultrathin amorphous C layer. The results of the orbitalwise analyses of synchrotron Ta L3-edge, C K-edge, and O K-edge X-ray absorption spectroscopy showed that the C layers between Ta2O5 and Ta are significantly oxidized to form COx and, at the same time, oxidize the Ta layers with different degrees of oxidation depending on the distance: full oxidation at the nearest 5 nm Ta and partial oxidation in the next 15 nm Ta. The depth-resolved information on the electronic structure for each layer further revealed a significant modification of the band alignments due to C insertion. Full oxidation of the Ta metal near the C interlayer suggests that the oxygen-vacancy-related valence change memory mechanism for the RS can be suppressed, thereby changing the RS functionalities fundamentally. The knowledge on the origin of C-enhanced surfaces can be applied to other metal/oxide interfaces and used for the advanced design of memristive devices. |
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| 700 | 1 | _ | |a Kim, Ki-jeong |0 0000-0001-9233-3096 |b 1 |
| 700 | 1 | _ | |a Lee, Kug-Seung |0 0000-0002-7570-8404 |b 2 |
| 700 | 1 | _ | |a Lübben, Michael |0 P:(DE-Juel1)162283 |b 3 |
| 700 | 1 | _ | |a Chen, Shaochuan |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Valov, Ilia |0 P:(DE-Juel1)131014 |b 5 |e Corresponding author |
| 773 | _ | _ | |a 10.1021/acsami.3c00920 |g p. acsami.3c00920 |0 PERI:(DE-600)2467494-1 |n 14 |p 18528–18536 |t ACS applied materials & interfaces |v 15 |y 2023 |x 1944-8244 |
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