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@ARTICLE{Zhao:1006797,
      author       = {Zhao, Xianyue and Menzel, Stephan and Polian, Ilia and
                      Schmidt, Heidemarie and Du, Nan},
      title        = {{R}eview on {R}esistive {S}witching {D}evices {B}ased on
                      {M}ultiferroic {B}i{F}e{O}3},
      journal      = {Nanomaterials},
      volume       = {13},
      number       = {8},
      issn         = {2079-4991},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2023-01850},
      pages        = {1325 -},
      year         = {2023},
      abstract     = {This review provides a comprehensive examination of the
                      state-of-the-art research on resistive switching (RS) in
                      BiFeO3 (BFO)-based memristive devices. By exploring possible
                      fabrication techniques for preparing the functional BFO
                      layers in memristive devices, the constructed lattice
                      systems and corresponding crystal types responsible for RS
                      behaviors in BFO-based memristive devices are analyzed. The
                      physical mechanisms underlying RS in BFO-based memristive
                      devices, i.e., ferroelectricity and valence change memory,
                      are thoroughly reviewed, and the impact of various effects
                      such as the doping effect, especially in the BFO layer, is
                      evaluated. Finally, this review provides the applications of
                      BFO devices and discusses the valid criteria for evaluating
                      the energy consumption in RS and potential optimization
                      techniques for memristive devices.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / DFG
                      project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811) / BMBF 16ME0399 - Verbundprojekt:
                      Neuro-inspirierte Technologien der künstlichen Intelligenz
                      für die Elektronik der Zukunft - NEUROTEC II -
                      (BMBF-16ME0399) / BMBF 16ME0398K - Verbundprojekt:
                      Neuro-inspirierte Technologien der künstlichen Intelligenz
                      für die Elektronik der Zukunft - NEUROTEC II -
                      (BMBF-16ME0398K) / DFG project 441906609 - Domino Processing
                      Unit: Auf dem Weg zum hocheffizienten In-Memory-Rechenwerk
                      (MemDPU) (441906609)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(GEPRIS)167917811 /
                      G:(DE-82)BMBF-16ME0399 / G:(DE-82)BMBF-16ME0398K /
                      G:(GEPRIS)441906609},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37110910},
      UT           = {WOS:000979630100001},
      doi          = {10.3390/nano13081325},
      url          = {https://juser.fz-juelich.de/record/1006797},
}