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@ARTICLE{Faley:1007332,
      author       = {Faley, Michael I. and Williams, Joshua and Lu, Penghan and
                      Dunin-Borkowski, Rafal E.},
      title        = {{T}i{N}-{N}b{N}-{T}i{N} and {P}ermalloy {N}anostructures
                      for {A}pplications in {T}ransmission {E}lectron
                      {M}icroscopy},
      journal      = {Electronics},
      volume       = {12},
      number       = {9},
      issn         = {2079-9292},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2023-02018},
      pages        = {2144 -},
      year         = {2023},
      abstract     = {We fabricated superconducting and ferromagnetic
                      nanostructures, which are intended for applications in
                      transmission electron microscopy (TEM), in a commercial
                      sample holder that can be cooled using liquid helium.
                      Nanoscale superconducting quantum-interference devices
                      (nanoSQUIDs) with sub-100 nm nanobridge Josephson junctions
                      (nJJs) were prepared at a distance of ~300 nm from the edges
                      of a 2 mm × 2 mm × 0.05 mm substrate. Thin-film
                      TiN-NbN-TiN heterostructures were used to optimize the
                      superconducting parameters and enhance the oxidation and
                      corrosion resistance of nJJs and nanoSQUIDs. Non-hysteretic
                      I(V) characteristics of nJJs, as well as peak-to-peak
                      quantum oscillations in the V(B) characteristics of the
                      nanoSQUIDs with an amplitude of up to ~20 µV, were obtained
                      at a temperature ~5 K, which is suitable for operation in
                      TEM. Electron-beam lithography, high-selectivity reactive
                      ion etching with pure SF6 gas, and a naturally created
                      undercut in the Si substrate were used to prepare nanoSQUIDs
                      on a SiN membrane within ~500 nm from the edge of the
                      substrate. Permalloy nanodots with diameters down to ~100 nm
                      were prepared on SiN membranes using three nanofabrication
                      methods. High-resolution TEM revealed that permalloy films
                      on a SiN buffer have a polycrystalline structure with an
                      average grain dimension of approximately 5 nm and a lattice
                      constant of ~0.36 nm. The M(H) dependences of the permalloy
                      films were measured and revealed coercive fields of 2 and 10
                      G at 300 and 5 K, respectively. These technologies are
                      promising for the fabrication of superconducting electronics
                      based on nJJs and ferromagnetic nanostructures for operation
                      in TEM.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000987253800001},
      doi          = {10.3390/electronics12092144},
      url          = {https://juser.fz-juelich.de/record/1007332},
}