Hauptseite > Publikationsdatenbank > TiN-NbN-TiN and Permalloy Nanostructures for Applications in Transmission Electron Microscopy > print

001     1007332
005     20230929112529.0
024 7 _ |a 10.3390/electronics12092144
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100 1 _ |a Faley, Michael I.
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245 _ _ |a TiN-NbN-TiN and Permalloy Nanostructures for Applications in Transmission Electron Microscopy
260 _ _ |a Basel
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520 _ _ |a We fabricated superconducting and ferromagnetic nanostructures, which are intended for applications in transmission electron microscopy (TEM), in a commercial sample holder that can be cooled using liquid helium. Nanoscale superconducting quantum-interference devices (nanoSQUIDs) with sub-100 nm nanobridge Josephson junctions (nJJs) were prepared at a distance of ~300 nm from the edges of a 2 mm × 2 mm × 0.05 mm substrate. Thin-film TiN-NbN-TiN heterostructures were used to optimize the superconducting parameters and enhance the oxidation and corrosion resistance of nJJs and nanoSQUIDs. Non-hysteretic I(V) characteristics of nJJs, as well as peak-to-peak quantum oscillations in the V(B) characteristics of the nanoSQUIDs with an amplitude of up to ~20 µV, were obtained at a temperature ~5 K, which is suitable for operation in TEM. Electron-beam lithography, high-selectivity reactive ion etching with pure SF6 gas, and a naturally created undercut in the Si substrate were used to prepare nanoSQUIDs on a SiN membrane within ~500 nm from the edge of the substrate. Permalloy nanodots with diameters down to ~100 nm were prepared on SiN membranes using three nanofabrication methods. High-resolution TEM revealed that permalloy films on a SiN buffer have a polycrystalline structure with an average grain dimension of approximately 5 nm and a lattice constant of ~0.36 nm. The M(H) dependences of the permalloy films were measured and revealed coercive fields of 2 and 10 G at 300 and 5 K, respectively. These technologies are promising for the fabrication of superconducting electronics based on nJJs and ferromagnetic nanostructures for operation in TEM.
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700 1 _ |a Williams, Joshua
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700 1 _ |a Lu, Penghan
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700 1 _ |a Dunin-Borkowski, Rafal E.
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773 _ _ |a 10.3390/electronics12092144
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