Home > Publications database > Modeling of ReRAMs based on the Valence Change Mechanism: From Atomistic to Circuit-Level Models > print

001     1007859
005     20230602202604.0
024 7 _ |a 2128/34492
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037 _ _ |a FZJ-2023-02221
100 1 _ |a Menzel, Stephan
|0 P:(DE-Juel1)158062
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111 2 _ |a IEEE 15th International Memory Workshop
|g IMW
|c Monterey
|d 2023-05-21 - 2023-05-24
|w USA
245 _ _ |a Modeling of ReRAMs based on the Valence Change Mechanism: From Atomistic to Circuit-Level Models
260 _ _ |c 2023
336 7 _ |a Conference Paper
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336 7 _ |a Other
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536 _ _ |a 5233 - Memristive Materials and Devices (POF4-523)
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536 _ _ |a BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399)
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536 _ _ |a BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K)
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536 _ _ |a BMBF 03ZU1106AA - NeuroSys: Memristor Crossbar Architekturen (Projekt A) - A (03ZU1106AA)
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536 _ _ |a SFB 917 B09 - In-situ-Transmissionselektronenmikroskopie von resistiv schaltenden Bauelementen (B09) (277688395)
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856 4 _ |u https://juser.fz-juelich.de/record/1007859/files/IMW%202023%20ReRAM%20Tutorial%20Stephan%20Menzel%20v2.pdf
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910 1 _ |a Forschungszentrum Jülich
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|v Neuromorphic Computing and Network Dynamics
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914 1 _ |y 2023
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