Home > Publications database > Electrochemical Memristor‐Based Artificial Neurons and Synapses – fundamentals, applications, and challenges > print |
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024 | 7 | _ | |a 10.1002/adma.202301924 |2 doi |
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100 | 1 | _ | |a Chen, Shaochuan |0 P:(DE-HGF)0 |b 0 |
245 | _ | _ | |a Electrochemical Memristor‐Based Artificial Neurons and Synapses – fundamentals, applications, and challenges |
260 | _ | _ | |a Weinheim |c 2023 |b Wiley-VCH |
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520 | _ | _ | |a Artificial neurons and synapses are considered essential for the progress of the future brain inspired computing, based on beyond von Neumann architectures. The present review provides a discussion on the common electrochemical fundamentals of biological and artificial cells, focusing on their similarities with the redox-based memristive devices. We present the driving forces behind the functionalities and the ways to control them by electrochemical-materials approach. Factors, such as chemical symmetry of the electrodes, doping of the solid electrolyte, concentration gradients and excess surface energy are discussed as essential to understand, predict and design artificial neurons and synapses. A variety of two and three terminal memristive devices and memristive architectures are presented and their application for solving various problems are shown. The work overviews the current understandings on the complex processes of neural signal generation and transmission in both biological and artificial cells and present the state-of-the-art applications, including signal transmission between biological and artificial cells. This example is showcasing the possibility for creating bioelectronic interfaces and integrating artificial circuits in biological systems. Prospectives and challenges of the modern technology towards low power, high information density circuits are highlighted. |
536 | _ | _ | |a 5233 - Memristive Materials and Devices (POF4-523) |0 G:(DE-HGF)POF4-5233 |c POF4-523 |f POF IV |x 0 |
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700 | 1 | _ | |a Zhang, Teng |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Tappertzhofen, S. |0 P:(DE-HGF)0 |b 2 |e Corresponding author |
700 | 1 | _ | |a Yang, Yuchao |0 P:(DE-HGF)0 |b 3 |e Corresponding author |
700 | 1 | _ | |a Valov, Ilia |0 P:(DE-Juel1)131014 |b 4 |e Corresponding author |
773 | _ | _ | |a 10.1002/adma.202301924 |g p. 2301924 |0 PERI:(DE-600)1474949-X |n 37 |p 2301924 |t Advanced materials |v 35 |y 2023 |x 0935-9648 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/1008319/files/Invoice_RLNK505135657.pdf |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/1008319/files/Invoice_RLNK505135667.pdf |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/1008319/files/Invoice_RLNK505135944.pdf |
856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/1008319/files/Advanced%20Materials%20-%202023%20-%20Chen%20-%20Electrochemical%E2%80%90Memristor%E2%80%90Based%20Artificial%20Neurons%20and%20Synapses%20Fundamentals%20.pdf |
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