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@ARTICLE{Brinkmann:1008321,
      author       = {Brinkmann, Malte and Haase, Felix and Bothe, Karsten and
                      Bittkau, Karsten and Lambertz, Andreas and Duan, Weiyuan and
                      Ding, Kaining and Sperlich, Hans-Peter and Waltinger,
                      Andreas and Schulte-Huxel, Henning},
      title        = {{I}mpact of the contacting scheme on {I}-{V} measurements
                      of metallization-free silicon heterojunction solar cells},
      journal      = {EPJ Photovoltaics},
      volume       = {14},
      issn         = {2105-0716},
      address      = {Les Ulis},
      publisher    = {EDP Sciences},
      reportid     = {FZJ-2023-02283},
      pages        = {18},
      year         = {2023},
      abstract     = {I-V measurements are sensitive to the number and
                      positioning of current and voltage sensingcontacts. For
                      busbarless solar cells, measurement setups have been
                      developed using current collection wires andseparate voltage
                      sense contacts. Placing the latter at a defined position
                      enables a grid resistance neglectingmeasurement and thus I-V
                      characteristics independent from the contacting system. This
                      technique has beendeveloped for solar cells having a finger
                      grid and good conductivity in the direction of the fingers.
                      The optimalposition of the sense contact in case
                      offinger-free silicon heterojunction solar cells has not yet
                      been studied. Here, thelateral charge carrier transport
                      occurs ina transparentconductiveoxide layer resulting ina
                      higher lateral resistance.We perform finite difference
                      method simulations of HJT solar cells without front
                      metallization to investigate theimpact of high lateral
                      resistances on the I-Vmeasurement of solar cells.We showthe
                      high sensitivity on thenumberof used wires for contacting as
                      well as the position of the sense contact for the voltage
                      measurement. Using thesimulations,we are able toexplainthe
                      highdifferenceofupto $7.5\%infill$ factormeasurements
                      ofmetal free solar cellswith varying TCO sheet resistances
                      between two measurement systems using different contacting
                      setups. Wepropose a method to compensate for the contacting
                      system to achieve a grid-resistance neglecting
                      measurementwith both systems allowing a reduction of the FF
                      difference to below $1.5\%.$},
      cin          = {IEK-5},
      ddc          = {670},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000975506700001},
      doi          = {10.1051/epjpv/2023009},
      url          = {https://juser.fz-juelich.de/record/1008321},
}