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@ARTICLE{Rosenzweig:1008524,
      author       = {Rosenzweig, D. S. and Schnedler, M. and Dunin-Borkowski, R.
                      E. and Ebert, Ph. and Eisele, H.},
      title        = {{M}orphologic and electronic changes induced by thermally
                      supported hydrogen cleaning of {G}a{A}s(110) facets},
      journal      = {Journal of vacuum science $\&$ technology / B},
      volume       = {41},
      number       = {4},
      issn         = {2166-2746},
      address      = {New York, NY},
      publisher    = {AIP Publishing},
      reportid     = {FZJ-2023-02364},
      pages        = {044202},
      year         = {2023},
      abstract     = {Hydrogen exposure and annealing at 400 °C leads to a
                      layer-by-layer etching of the n-doped GaAs(110) cleavage
                      surface removing islands and forming preferentially step
                      edge sections with [001] normal vector. In addition, a large
                      density of negatively charged point defects is formed,
                      leading to a Fermi level pinning in the lower part of the
                      bandgap. Their charge transfer level is in line with that of
                      Ga vacancies only, suggesting that adatoms desorb
                      preferentially due to hydrogen bonding and subsequent Ga–H
                      desorption. The results obtained on cleavage surfaces imply
                      that the morphology of nanowire sidewall facets obtained by
                      hydrogen cleaning is that of an etched surface, but not of
                      the initial growth surface. Likewise, the hydrogen-cleaned
                      etched surface does not reveal the intrinsic electronic
                      properties of the initially grown nanowires.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535) / DFG project 390247238 - III-V
                      Halbleiter Nanodrähte: Korrelation von lokaler
                      elektronischer Struktur, Leitfähigkeit und Ladungsträger
                      Lebensdauer (390247238)},
      pid          = {G:(DE-HGF)POF4-5351 / G:(GEPRIS)390247238},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000993980000002},
      doi          = {10.1116/6.0002733},
      url          = {https://juser.fz-juelich.de/record/1008524},
}