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@ARTICLE{Vitusevich:1008529,
      author       = {Vitusevich, S. and Nasieka, I. M. and Naumov, A. V. and
                      Kalyuzhnyi, V. V. and Liubchenko, O. I. and Antypov, I. O.
                      and Boyko, M. I. and Belyaev, A. E.},
      title        = {{T}hermometry of {A}l{G}a{N}/{G}a{N} 2{D} {C}hannels at
                      {H}igh {E}lectric {F}ields {U}sing {E}lectrical and
                      {O}ptical {M}ethods},
      journal      = {Advanced electronic materials},
      volume       = {9},
      number       = {6},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2023-02366},
      pages        = {2201330},
      year         = {2023},
      abstract     = {The active channels in AlGaN/GaN-based heterostructures are
                      studied under different applied electrical fields to
                      identify the Joule heating factors affecting the temperature
                      values in the channels. The temperature in active channels
                      of two different lengths (30 and 180 μm) is characterized
                      using optical methods, and electrical methods are used as a
                      reference. The technique of optical thermometry is based on
                      the data of micro-photoluminescence andmicro-Raman
                      experiments. The electrical method is based on the
                      measurements of current–voltage characteristics for
                      comparison. It is shown that photoluminescence- and
                      electrical-based temperature values demonstratesimilar
                      behavior and good correlation. The Raman-based method,
                      exploiting the temperature dependence of the frequency
                      position of E 2high vibrational band in GaN, shows a
                      significant deviation compared with electrical-
                      andluminescence-based methods. This deviation is shown to be
                      related to the residual mechanical strain in the layered
                      structure and the formation of hot phonons. The influence of
                      hot phonons and mechanical strain effectsincreases at high
                      electrical load (>5 kV cm−1 ) and at high temperatures
                      (>400 °C), respectively.},
      cin          = {IBI-3},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)IBI-3-20200312},
      pnm          = {5241 - Molecular Information Processing in Cellular Systems
                      (POF4-524)},
      pid          = {G:(DE-HGF)POF4-5241},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000970867900001},
      doi          = {10.1002/aelm.202201330},
      url          = {https://juser.fz-juelich.de/record/1008529},
}