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@ARTICLE{Zhang:1009392,
      author       = {Zhang, Wei and Zhang, Hangming and Sun, Suyang and Wang,
                      Xiaozhe and Lu, Zhewen and Wang, Xudong and Wang, Jiang-Jing
                      and Jia, Chunlin and Schön, Carl-Friedrich and Mazzarello,
                      Riccardo and Ma, En and Wuttig, Matthias},
      title        = {{M}etavalent {B}onding in {L}ayered {P}hase‐{C}hange
                      {M}emory {M}aterials},
      journal      = {Advanced science},
      volume       = {10},
      number       = {15},
      issn         = {2198-3844},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2023-02796},
      pages        = {2300901},
      year         = {2023},
      cin          = {PGI-10},
      ddc          = {624},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / BMBF
                      16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC II - (BMBF-16ME0398K)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0398K},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {36995041},
      UT           = {WOS:000961567200001},
      doi          = {10.1002/advs.202300901},
      url          = {https://juser.fz-juelich.de/record/1009392},
}