001009549 001__ 1009549
001009549 005__ 20240226075408.0
001009549 020__ $$a978-3-95806-702-8
001009549 0247_ $$2datacite_doi$$a10.34734/FZJ-2023-02871
001009549 037__ $$aFZJ-2023-02871
001009549 1001_ $$0P:(DE-Juel1)173924$$aCüppers, Felix$$b0$$eCorresponding author$$ufzj
001009549 245__ $$aHafnium oxide based memristive devices as functional elements of neuromorphic circuits$$f - 2024-02-06
001009549 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2023
001009549 300__ $$avi, ii, 214
001009549 3367_ $$2DataCite$$aOutput Types/Dissertation
001009549 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
001009549 3367_ $$2ORCID$$aDISSERTATION
001009549 3367_ $$2BibTeX$$aPHDTHESIS
001009549 3367_ $$02$$2EndNote$$aThesis
001009549 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1707223401_7512
001009549 3367_ $$2DRIVER$$adoctoralThesis
001009549 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Information / Information$$v97
001009549 502__ $$aDissertation, RWTH Aachen University, 2023$$bDissertation$$cRWTH Aachen University$$d2023
001009549 520__ $$aDue to the approaching limit of the computational speed of classical von-Neumann architectures, data transfer-intensive cognitive applications in future information technology demand a paradigm shift. "Beyond-von Neumann" concepts such as biologically inspired neuromorphic circuits with adjustable synaptic weights promise an energy-efficient increase in computing power. In this context, novel memristive devices such as redox-based resistive random access memories (ReRAM) are investigated intensively. They combine nonvolatility, scalability and energy efficiency. Moreover, they also allow the programming of multiple different resistive states, which further increases the memory density in addition to the compact design. Due to their mixed ionic-electronic function, they differ significantly from purely electronic systems. Important criteria for the use of memristive devices in neuromorphic circuits are the operation parameters for the two switching modes abrupt and analog switching, the stochasticity of the switching processes SET and RESET, the variability of the resistance states HRS and LRS as well as the number of programmable states. In addition to the quantification of these parameters, the physical understanding of the processes taking place is crucial in order to make predictive statements about applicability and reliability in circuits. In this context, the exchange with and further development ofphysical models is essential. A typical filamentary ReRAM cell operating in the bipolar valence change mechanism (VCM) is composed of one or more insulating metal oxide layers and two metal electrodes, which differ in terms of work function and chemical reactivity. A preferred choice for the metal oxide layer by the industry is HfO2, since it is already available in semiconductor device fabrication lines. By intentionally introducing an additional sub-stoichiometric titanium oxide layer and using a chemically reactive titanium electrode and an inert platinum electrode, reproducible and stable switching behavior is obtained. In this work, the described switching modes are systematically analyzed on nanoscale Pt/HfO2/TiOx/Ti/Pt devices based on statistical ensembles. The devices are highly comparable to industrially available options. With the aid of compact model simulations, the results are physically interpreted to obtain a comprehensive description of the devices as a foundation for usage in future "Beyond-von Neumann" concepts. The results allow an evaluation of the HfO2-based ReRAM cells with respect to their application in novel neuromorphic circuits.
001009549 536__ $$0G:(DE-HGF)POF4-899$$a899 - ohne Topic (POF4-899)$$cPOF4-899$$fPOF IV$$x0
001009549 8564_ $$uhttps://juser.fz-juelich.de/record/1009549/files/Information_97.pdf$$yOpenAccess
001009549 909CO $$ooai:juser.fz-juelich.de:1009549$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
001009549 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)173924$$aForschungszentrum Jülich$$b0$$kFZJ
001009549 9131_ $$0G:(DE-HGF)POF4-899$$1G:(DE-HGF)POF4-890$$2G:(DE-HGF)POF4-800$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
001009549 9141_ $$y2023
001009549 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
001009549 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
001009549 920__ $$lyes
001009549 9201_ $$0I:(DE-Juel1)PGI-10-20170113$$kPGI-10$$lJARA Institut Green IT$$x0
001009549 980__ $$aphd
001009549 980__ $$aVDB
001009549 980__ $$aUNRESTRICTED
001009549 980__ $$abook
001009549 980__ $$aI:(DE-Juel1)PGI-10-20170113
001009549 9801_ $$aFullTexts