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@PHDTHESIS{Cppers:1009549,
author = {Cüppers, Felix},
title = {{H}afnium oxide based memristive devices as functional
elements of neuromorphic circuits},
volume = {97},
school = {RWTH Aachen University},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2023-02871},
isbn = {978-3-95806-702-8},
series = {Schriften des Forschungszentrums Jülich Reihe Information
/ Information},
pages = {vi, ii, 214},
year = {2023},
note = {Dissertation, RWTH Aachen University, 2023},
abstract = {Due to the approaching limit of the computational speed of
classical von-Neumann architectures, data transfer-intensive
cognitive applications in future information technology
demand a paradigm shift. "Beyond-von Neumann" concepts such
as biologically inspired neuromorphic circuits with
adjustable synaptic weights promise an energy-efficient
increase in computing power. In this context, novel
memristive devices such as redox-based resistive random
access memories (ReRAM) are investigated intensively. They
combine nonvolatility, scalability and energy efficiency.
Moreover, they also allow the programming of multiple
different resistive states, which further increases the
memory density in addition to the compact design. Due to
their mixed ionic-electronic function, they differ
significantly from purely electronic systems. Important
criteria for the use of memristive devices in neuromorphic
circuits are the operation parameters for the two switching
modes abrupt and analog switching, the stochasticity of the
switching processes SET and RESET, the variability of the
resistance states HRS and LRS as well as the number of
programmable states. In addition to the quantification of
these parameters, the physical understanding of the
processes taking place is crucial in order to make
predictive statements about applicability and reliability in
circuits. In this context, the exchange with and further
development ofphysical models is essential. A typical
filamentary ReRAM cell operating in the bipolar valence
change mechanism (VCM) is composed of one or more insulating
metal oxide layers and two metal electrodes, which differ in
terms of work function and chemical reactivity. A preferred
choice for the metal oxide layer by the industry is HfO2,
since it is already available in semiconductor device
fabrication lines. By intentionally introducing an
additional sub-stoichiometric titanium oxide layer and using
a chemically reactive titanium electrode and an inert
platinum electrode, reproducible and stable switching
behavior is obtained. In this work, the described switching
modes are systematically analyzed on nanoscale
Pt/HfO2/TiOx/Ti/Pt devices based on statistical ensembles.
The devices are highly comparable to industrially available
options. With the aid of compact model simulations, the
results are physically interpreted to obtain a comprehensive
description of the devices as a foundation for usage in
future "Beyond-von Neumann" concepts. The results allow an
evaluation of the HfO2-based ReRAM cells with respect to
their application in novel neuromorphic circuits.},
cin = {PGI-10},
cid = {I:(DE-Juel1)PGI-10-20170113},
pnm = {899 - ohne Topic (POF4-899)},
pid = {G:(DE-HGF)POF4-899},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
doi = {10.34734/FZJ-2023-02871},
url = {https://juser.fz-juelich.de/record/1009549},
}