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@PHDTHESIS{Cppers:1009549,
      author       = {Cüppers, Felix},
      title        = {{H}afnium oxide based memristive devices as functional
                      elements of neuromorphic circuits},
      volume       = {97},
      school       = {RWTH Aachen University},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2023-02871},
      isbn         = {978-3-95806-702-8},
      series       = {Schriften des Forschungszentrums Jülich Reihe Information
                      / Information},
      pages        = {vi, ii, 214},
      year         = {2023},
      note         = {Dissertation, RWTH Aachen University, 2023},
      abstract     = {Due to the approaching limit of the computational speed of
                      classical von-Neumann architectures, data transfer-intensive
                      cognitive applications in future information technology
                      demand a paradigm shift. "Beyond-von Neumann" concepts such
                      as biologically inspired neuromorphic circuits with
                      adjustable synaptic weights promise an energy-efficient
                      increase in computing power. In this context, novel
                      memristive devices such as redox-based resistive random
                      access memories (ReRAM) are investigated intensively. They
                      combine nonvolatility, scalability and energy efficiency.
                      Moreover, they also allow the programming of multiple
                      different resistive states, which further increases the
                      memory density in addition to the compact design. Due to
                      their mixed ionic-electronic function, they differ
                      significantly from purely electronic systems. Important
                      criteria for the use of memristive devices in neuromorphic
                      circuits are the operation parameters for the two switching
                      modes abrupt and analog switching, the stochasticity of the
                      switching processes SET and RESET, the variability of the
                      resistance states HRS and LRS as well as the number of
                      programmable states. In addition to the quantification of
                      these parameters, the physical understanding of the
                      processes taking place is crucial in order to make
                      predictive statements about applicability and reliability in
                      circuits. In this context, the exchange with and further
                      development ofphysical models is essential. A typical
                      filamentary ReRAM cell operating in the bipolar valence
                      change mechanism (VCM) is composed of one or more insulating
                      metal oxide layers and two metal electrodes, which differ in
                      terms of work function and chemical reactivity. A preferred
                      choice for the metal oxide layer by the industry is HfO2,
                      since it is already available in semiconductor device
                      fabrication lines. By intentionally introducing an
                      additional sub-stoichiometric titanium oxide layer and using
                      a chemically reactive titanium electrode and an inert
                      platinum electrode, reproducible and stable switching
                      behavior is obtained. In this work, the described switching
                      modes are systematically analyzed on nanoscale
                      Pt/HfO2/TiOx/Ti/Pt devices based on statistical ensembles.
                      The devices are highly comparable to industrially available
                      options. With the aid of compact model simulations, the
                      results are physically interpreted to obtain a comprehensive
                      description of the devices as a foundation for usage in
                      future "Beyond-von Neumann" concepts. The results allow an
                      evaluation of the HfO2-based ReRAM cells with respect to
                      their application in novel neuromorphic circuits.},
      cin          = {PGI-10},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {899 - ohne Topic (POF4-899)},
      pid          = {G:(DE-HGF)POF4-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      doi          = {10.34734/FZJ-2023-02871},
      url          = {https://juser.fz-juelich.de/record/1009549},
}