%0 Journal Article
%A Frahm, T.
%A Buttberg, M.
%A Gvozdev, G.
%A Müller, R. A.
%A Chen, S.
%A Sun, B.
%A Raffauf, L.
%A Menzel, S.
%A Valov, I.
%A Wouters, D.
%A Waser, R.
%A Knoch, J.
%T Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
%J IEEE journal of the Electron Devices Society
%V 11
%@ 2168-6734
%C [New York, NY]
%I IEEE
%M FZJ-2023-02994
%P 432 - 437
%D 2023
%X Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of −1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001045254200001
%R 10.1109/JEDS.2023.3297855
%U https://juser.fz-juelich.de/record/1010183