TY  - JOUR
AU  - Frahm, T.
AU  - Buttberg, M.
AU  - Gvozdev, G.
AU  - Müller, R. A.
AU  - Chen, S.
AU  - Sun, B.
AU  - Raffauf, L.
AU  - Menzel, S.
AU  - Valov, I.
AU  - Wouters, D.
AU  - Waser, R.
AU  - Knoch, J.
TI  - Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
JO  - IEEE journal of the Electron Devices Society
VL  - 11
SN  - 2168-6734
CY  - [New York, NY]
PB  - IEEE
M1  - FZJ-2023-02994
SP  - 432 - 437
PY  - 2023
AB  - Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of −1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001045254200001
DO  - DOI:10.1109/JEDS.2023.3297855
UR  - https://juser.fz-juelich.de/record/1010183
ER  -