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@ARTICLE{Frahm:1010183,
      author       = {Frahm, T. and Buttberg, M. and Gvozdev, G. and Müller, R.
                      A. and Chen, S. and Sun, B. and Raffauf, L. and Menzel, S.
                      and Valov, I. and Wouters, D. and Waser, R. and Knoch, J.},
      title        = {{L}ateral {E}lectrochemical {M}etallization {C}ells for
                      {R}econfigurable {I}nterconnect {S}ystems},
      journal      = {IEEE journal of the Electron Devices Society},
      volume       = {11},
      issn         = {2168-6734},
      address      = {[New York, NY]},
      publisher    = {IEEE},
      reportid     = {FZJ-2023-02994},
      pages        = {432 - 437},
      year         = {2023},
      abstract     = {Lateral electrochemical metallization (ECM) cells are
                      fabricated with a combined spacer/damascene process. The
                      process allows the realization of nanoscale geometrical
                      distances between the two electrodes independent of
                      lithography. Such lateral ECM cells are an essential part in
                      a reconfigurable interconnect system that may yield a
                      strongly increased connectivity in artificial neural
                      networks. The lateral cells show memristive properties
                      comparable to vertical cells with switching voltages in the
                      range of −1.5V to 2.5V. The influence of electrode line
                      edge roughness on SET kinetics of such lateral cells is
                      investigated via kinetic Monte Carlo simulations, finding a
                      minor influence on SET time variability.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / BMBF
                      16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC II - (BMBF-16ME0398K) / BMBF 16ME0399 -
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC II - (BMBF-16ME0399)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0398K /
                      G:(DE-82)BMBF-16ME0399},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001045254200001},
      doi          = {10.1109/JEDS.2023.3297855},
      url          = {https://juser.fz-juelich.de/record/1010183},
}