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@ARTICLE{Mikulics:1010546,
author = {Mikulics, Martin and Adam, Roman and Chen, Genyu and
Chakraborty, Debamitra and Cheng, Jing and Pericolo, Anthony
and Komissarov, Ivan and Bürgler, Daniel E. and Heidtfeld,
Sarah F. and Serafini, John and Preble, Stefan and
Sobolewski, Roman and Schneider, Claus M. and Mayer, Joachim
and Hardtdegen, Hilde H.},
title = {{D}etermination of {T}hermal {D}amage {T}hreshold in {TH}z
{P}hotomixers {U}sing {R}aman {S}pectroscopy},
journal = {Crystals},
volume = {13},
number = {8},
issn = {2073-4352},
address = {Basel},
publisher = {MDPI},
reportid = {FZJ-2023-03120},
pages = {1267 -},
year = {2023},
abstract = {The increase of device lifetime and reliability of THz
photomixers will play an essential role in their possible
future application. Therefore, their optimal work
conditions/operation range, i.e., the maximal incident
optical power should be experimentally estimated. We
fabricated and tested THz photomixer devices based on
nitrogen-implanted GaAs integrated with a Bragg reflector.
Raman spectroscopy was applied to investigate the material
properties and to disclose any reversible or irreversible
material changes. The results indicate that degradation
effects in the photomixer structures/material could be
avoided if the total optical power density does not exceed
levels of about 0.7 mW/µm2 for 100 min of operation.
Furthermore, the investigations performed during 1000 min of
optical exposure on the photomixer devices’ central region
comprising interdigitated metal-semiconductor-metal (MSM)
structures suggest a reversible “curing” mechanism if
the power density level of ~0.58 mW/µm2 is not exceeded.
Long-term operation (up to 1000 h) reveals that the
photomixer structures can withstand an average optical power
density of up to ~0.4 mW/µm2 without degradation when
biased at 10 V. Besides the decrease of the position of the
A1g (LO) Raman mode from ~291 cm−1 down to ~288 cm−1
with increasing optical power density and operation time,
broad Raman modes evolve at about 210 cm−1, which can be
attributed to degradation effects in the active
photomixer/MSM area. In addition, the performed carrier
lifetime and photomixer experiments demonstrated that these
structures generated continuous wave sub-THz radiation
efficiently as long as their optimal work
conditions/operation range were within the limits
established by our Raman studies.},
cin = {ER-C-2 / PGI-6},
ddc = {540},
cid = {I:(DE-Juel1)ER-C-2-20170209 / I:(DE-Juel1)PGI-6-20110106},
pnm = {5353 - Understanding the Structural and Functional Behavior
of Solid State Systems (POF4-535)},
pid = {G:(DE-HGF)POF4-5353},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001056274200001},
doi = {10.3390/cryst13081267},
url = {https://juser.fz-juelich.de/record/1010546},
}