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| Hauptseite > Publikationsdatenbank > Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy > print |
| Hauptseite > Publikationsdatenbank > Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy > print |
| 001 | 1010546 | ||
| 005 | 20240112202227.0 | ||
| 024 | 7 | _ | |a 10.3390/cryst13081267 |2 doi |
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| 037 | _ | _ | |a FZJ-2023-03120 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy |
| 260 | _ | _ | |a Basel |c 2023 |b MDPI |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm−1 down to ~288 cm−1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm−1, which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies. |
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| 700 | 1 | _ | |a Hardtdegen, Hilde H. |0 P:(DE-Juel1)125593 |b 14 |e Corresponding author |
| 773 | _ | _ | |a 10.3390/cryst13081267 |g Vol. 13, no. 8, p. 1267 - |0 PERI:(DE-600)2661516-2 |n 8 |p 1267 - |t Crystals |v 13 |y 2023 |x 2073-4352 |
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