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@ARTICLE{Haas:1014371,
      author       = {Haas, Benedikt and Boland, Tara M. and Elsässer, Christian
                      and Singh, Arunima K. and March, Katia and Barthel, Juri and
                      Koch, Christoph T. and Rez, Peter},
      title        = {{A}tomic-{R}esolution {M}apping of {L}ocalized {P}honon
                      {M}odes at {G}rain {B}oundaries},
      journal      = {Nano letters},
      volume       = {23},
      number       = {13},
      issn         = {1530-6984},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2023-03273},
      pages        = {5975 - 5980},
      year         = {2023},
      abstract     = {Phonon scattering at grain boundaries (GBs) is significant
                      in controlling the nanoscale device thermal conductivity.
                      However, GBs could also act as waveguides for selected
                      modes. To measure localized GB phonon modes, milli-electron
                      volt (meV) energy resolution is needed with subnanometer
                      spatial resolution. Using monochromated electron energy loss
                      spectroscopy (EELS) in the scanning transmission electron
                      microscope (STEM) we have mapped the 60 meV optic mode
                      across GBs in silicon at atomic resolution and compared it
                      to calculated phonon densities of states (DOS). The
                      intensity is strongly reduced at GBs characterized by the
                      presence of 5- and 7-fold rings where bond angles differ
                      from the bulk. The excellent agreement between theory and
                      experiment strongly supports the existence of localized
                      phonon modes and thus of GBs acting as waveguides.},
      cin          = {ER-C-2},
      ddc          = {660},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37341711},
      UT           = {WOS:001016724900001},
      doi          = {10.1021/acs.nanolett.3c01089},
      url          = {https://juser.fz-juelich.de/record/1014371},
}