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@ARTICLE{Jalil:1014683,
      author       = {Jalil, Abdur Rehman and Hou, Xiao and Schüffelgen, Peter
                      and Bae, Jin Hee and Neumann, Elmar and Mussler, Gregor and
                      Plucinski, Lukasz and Grützmacher, Detlev},
      title        = {{P}hase-{S}elective {E}pitaxy of {T}rigonal and
                      {O}rthorhombic {B}ismuth {T}hin {F}ilms on {S}i (111)},
      journal      = {Nanomaterials},
      volume       = {13},
      number       = {14},
      issn         = {2079-4991},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2023-03388},
      pages        = {2143 -},
      year         = {2023},
      abstract     = {Over the past three decades, the growth of Bi thin films
                      has been extensively explored due to their potential
                      applications in various fields such as thermoelectrics,
                      ferroelectrics, and recently for topological and
                      neuromorphic applications, too. Despite significant research
                      efforts in these areas, achieving reliable and controllable
                      growth of high-quality Bi thin-film allotropes has remained
                      a challenge. Previous studies have reported the growth of
                      trigonal and orthorhombic phases on various substrates
                      yielding low-quality epilayers characterized by surface
                      morphology. In this study, we present a systematic growth
                      investigation, enabling the high-quality growth of Bi
                      epilayers on Bi-terminated Si (111) 1 × 1 surfaces using
                      molecular beam epitaxy. Our work yields a phase map that
                      demonstrates the realization of trigonal, orthorhombic, and
                      pseudocubic thin-film allotropes of Bi. In-depth
                      characterization through X-ray diffraction (XRD) techniques
                      and scanning transmission electron microscopy (STEM)
                      analysis provides a comprehensive understanding of phase
                      segregation, phase stability, phase transformation, and
                      phase-dependent thickness limitations in various Bi
                      thin-film allotropes. Our study provides recipes for the
                      realization of high-quality Bi thin films with desired
                      phases, offering opportunities for the scalable refinement
                      of Bi into quantum and neuromorphic devices and for
                      revisiting technological proposals for this versatile
                      material platform from the past 30 years.},
      cin          = {PGI-9 / PGI-6 / PGI-10 / JARA-FIT / HNF},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      I:(DE-Juel1)PGI-10-20170113 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)HNF-20170116},
      pnm          = {5222 - Exploratory Qubits (POF4-522) / 5233 - Memristive
                      Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5222 / G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37513154},
      UT           = {WOS:001039888200001},
      doi          = {10.3390/nano13142143},
      url          = {https://juser.fz-juelich.de/record/1014683},
}