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@ARTICLE{Bui:1014692,
      author       = {Bui, Minh N. and Rost, Stefan and Auge, Manuel and Zhou,
                      Lanqing and Friedrich, Christoph and Blügel, Stefan and
                      Kretschmer, Silvan and Krasheninnikov, Arkady V. and
                      Watanabe, Kenji and Taniguchi, Takashi and Hofsäss, Hans C.
                      and Grützmacher, Detlev and Kardynal, Beata},
      title        = {{O}ptical {P}roperties of {M}o{S}e 2 {M}onolayer
                      {I}mplanted with {U}ltra-{L}ow-{E}nergy {C}r {I}ons},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {15},
      number       = {29},
      issn         = {1944-8244},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2023-03397},
      pages        = {35321 - 35331},
      year         = {2023},
      abstract     = {This paper explores the optical properties of an exfoliated
                      MoSe2 monolayer implanted with Cr+ ions, accelerated to 25
                      eV. Photoluminescence of the implanted MoSe2 reveals an
                      emission line from Cr-related defects that is present only
                      under weak electron doping. Unlike band-to-band transition,
                      the Cr-introduced emission is characterized by nonzero
                      activation energy, long lifetimes, and weak response to the
                      magnetic field. To rationalize the experimental results and
                      get insights into the atomic structure of the defects, we
                      modeled the Cr-ion irradiation process using ab initio
                      molecular dynamics simulations followed by the electronic
                      structure calculations of the system with defects. The
                      experimental and theoretical results suggest that the
                      recombination of electrons on the acceptors, which could be
                      introduced by the Cr implantation-induced defects, with the
                      valence band holes is the most likely origin of the
                      low-energy emission. Our results demonstrate the potential
                      of low-energy ion implantation as a tool to tailor the
                      properties of two-dimensional (2D) materials by doping.},
      cin          = {PGI-9 / PGI-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-1-20110106},
      pnm          = {5224 - Quantum Networking (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5224},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37432886},
      UT           = {WOS:001027014400001},
      doi          = {10.1021/acsami.3c05366},
      url          = {https://juser.fz-juelich.de/record/1014692},
}