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001016772 1001_ $$0P:(DE-Juel1)190570$$aZhang, Yongqiang$$b0$$ufzj
001016772 245__ $$aNoise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
001016772 260__ $$aWeinheim$$bWiley-VCH$$c2023
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001016772 520__ $$aThe transport and noise properties of fabricated, high-performance,gate-all-around silicon liquid-gated nanowire field-effect transistor devices areinvestigated in different concentrations of MgCl2solutions. The criticalconcentration of MgCl2solution for charge inversion at the solid-liquidinterface is verified using noise spectroscopy and confirmed using thecapacitance-voltage measurement technique. In this study, it is found that theHooge parameter (
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001016772 7001_ $$0P:(DE-Juel1)171802$$aBoichuk, Nazarii$$b1$$ufzj
001016772 7001_ $$0P:(DE-Juel1)186785$$aPustovyi, Denys$$b2$$ufzj
001016772 7001_ $$0P:(DE-Juel1)194817$$aChekubasheva, Valeriia$$b3$$ufzj
001016772 7001_ $$0P:(DE-Juel1)175511$$aLong, Hanlin$$b4$$ufzj
001016772 7001_ $$0P:(DE-HGF)0$$aPetrychuk, Mykhailo$$b5
001016772 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, Svetlana$$b6$$eCorresponding author
001016772 773__ $$0PERI:(DE-600)2750376-8$$a10.1002/admi.202300585$$gp. 2300585$$n36$$p2300585$$tAdvanced materials interfaces$$v10$$x2196-7350$$y2023
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