TY  - JOUR
AU  - Zhang, Yongqiang
AU  - Boichuk, Nazarii
AU  - Pustovyi, Denys
AU  - Chekubasheva, Valeriia
AU  - Long, Hanlin
AU  - Petrychuk, Mykhailo
AU  - Vitusevich, Svetlana
TI  - Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
JO  - Advanced materials interfaces
VL  - 10
IS  - 36
SN  - 2196-7350
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2023-03758
SP  - 2300585
PY  - 2023
AB  - The transport and noise properties of fabricated, high-performance,gate-all-around silicon liquid-gated nanowire field-effect transistor devices areinvestigated in different concentrations of MgCl2solutions. The criticalconcentration of MgCl2solution for charge inversion at the solid-liquidinterface is verified using noise spectroscopy and confirmed using thecapacitance-voltage measurement technique. In this study, it is found that theHooge parameter (𝜶H) and the equivalent input noise (SU) can effectivelyreflect the ion behavior on the surface of the nanowire. Moreover, the noisecurves for𝜶Hand SUindicate two turning points at concentrations of 10−4and 10−1m for a peak and a valley, respectively. The noise transformation isrelated to the behavior of ions near the solid-liquid interface in solutions withdifferent MgCl2concentrations is revealed. The results show that noisespectroscopy is a powerful method for monitoring charge dynamic processesin the research field of biosensors.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001069876200001
DO  - DOI:10.1002/admi.202300585
UR  - https://juser.fz-juelich.de/record/1016772
ER  -