Home > Publications database > Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors > print

001     1016772
005     20240213111720.0
024 7 _ |a 10.1002/admi.202300585
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100 1 _ |a Zhang, Yongqiang
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245 _ _ |a Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
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520 _ _ |a The transport and noise properties of fabricated, high-performance,gate-all-around silicon liquid-gated nanowire field-effect transistor devices areinvestigated in different concentrations of MgCl2solutions. The criticalconcentration of MgCl2solution for charge inversion at the solid-liquidinterface is verified using noise spectroscopy and confirmed using thecapacitance-voltage measurement technique. In this study, it is found that theHooge parameter (𝜶H) and the equivalent input noise (SU) can effectivelyreflect the ion behavior on the surface of the nanowire. Moreover, the noisecurves for𝜶Hand SUindicate two turning points at concentrations of 10−4and 10−1m for a peak and a valley, respectively. The noise transformation isrelated to the behavior of ions near the solid-liquid interface in solutions withdifferent MgCl2concentrations is revealed. The results show that noisespectroscopy is a powerful method for monitoring charge dynamic processesin the research field of biosensors.
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700 1 _ |a Long, Hanlin
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700 1 _ |a Petrychuk, Mykhailo
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700 1 _ |a Vitusevich, Svetlana
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773 _ _ |a 10.1002/admi.202300585
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856 4 _ |u https://juser.fz-juelich.de/record/1016772/files/Adv%20Materials%20Inter%20-%202023%20-%20Zhang%20-%20Noise%20Spectroscopy%20Analysis%20of%20Ion%20Behavior%20in%20Liquid%20Gate%E2%80%90All%E2%80%90Around%20Silicon%20Nanowire.pdf
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