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@ARTICLE{Sarantopoulos:1017633,
author = {Sarantopoulos, Alexandros and Waser, R. and Dittmann,
Regina},
title = {{E}ightwise switching mechanism in memristive {S}r{T}i{O} 3
devices and its implications on the device performance},
journal = {Physica status solidi / A},
volume = {221},
number = {22},
issn = {1862-6300},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2023-04249},
pages = {202300483},
year = {2024},
cin = {PGI-7 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {5233 - Memristive Materials and Devices (POF4-523) / BMBF
16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien
der künstlichen Intelligenz für die Elektronik der Zukunft
- NEUROTEC II - (BMBF-16ME0399) / BMBF 16ME0398K -
Verbundprojekt: Neuro-inspirierte Technologien der
künstlichen Intelligenz für die Elektronik der Zukunft -
NEUROTEC II - (BMBF-16ME0398K) / DFG project
G:(GEPRIS)167917811 - SFB 917: Resistiv schaltende
Chalkogenide für zukünftige Elektronikanwendungen:
Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
(167917811) / ACA - Advanced Computing Architectures
(SO-092)},
pid = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0399 /
G:(DE-82)BMBF-16ME0398K / G:(GEPRIS)167917811 /
G:(DE-HGF)SO-092},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001120029400001},
doi = {10.1002/pssa.202300483},
url = {https://juser.fz-juelich.de/record/1017633},
}