TY  - CONF
AU  - Schreckenberg, Lea
AU  - Otten, René
AU  - Vliex, Patrick
AU  - Xue, Ran
AU  - Tu, Jhih-Sian
AU  - Seidler, Inga
AU  - Trellenkamp, Stefan
AU  - Schreiber, Lars
AU  - Bluhm, Hendrik
AU  - van Waasen, Stefan
TI  - SiGe Qubit Biasing with a Cryogenic CMOS DAC at mK Temperature
PB  - IEEE
M1  - FZJ-2023-04689
SP  - 161-164
PY  - 2023
AB  - For running advanced algorithms on a universal quantum computer, millions of qubits are required. To make use of quantum effects, state-of-the-art solid-state qubit devices have to be cooled to mK temperatures, which limits the systems’ scalability with room temperature (RT) electronics. We present the direct co-integration of a scalable, fully integrated, eight channel Bias-DAC designed in a 65-nm bulk CMOS technology and a Si/SiGe spin qubit device at the mixing chamber (MC) of a dilution refrigerator operating below 45 mK MC temperature. As a full proof of principle, the bias of a single electron transistor used as a sensing dot, as well as a single and double quantum dot bias of the qubit device is reported. The slow drift of the DAC S&H output circuit of 0.96 μV/s leads to a calculated prospective power consumption of 64.5 pW/ch for DC qubit bias voltages generated at low temperature.
T2  - ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC)
CY  - 11 Sep 2023 - 14 Sep 2023, Lisbon (Portugal)
Y2  - 11 Sep 2023 - 14 Sep 2023
M2  - Lisbon, Portugal
LB  - PUB:(DE-HGF)8
UR  - <Go to ISI:>//WOS:001088613100041
DO  - DOI:10.1109/ESSCIRC59616.2023.10268801
UR  - https://juser.fz-juelich.de/record/1018304
ER  -