TY  - JOUR
AU  - Rushchanskii, Konstantin Z.
AU  - Lezaic, Marjana
AU  - Blügel, Stefan
TI  - Doped HfO x Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units
JO  - Physica status solidi / A
VL  - 221
IS  - 22
SN  - 1862-6300
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2023-05502
SP  - 2300404
PY  - 2024
AB  - In the study presented in this article, the impact of proton doping on the structuraland electronic properties of hafnium oxide nanoclusters is investigated, with afocus on their potential for use in resistive and polar switching devices. In theresults, it is shown that the incorporation of protons can stabilize the cage-likecrystalline structures of Hf6Oxclusters, leading to reversible changes in electronicproperties by varying oxygen stoichiometry. However, the full coverage of hafniaatoms by hydrogen removes in-gap states, highlighting the importance of con-trolled moisture content in redox-based memristive devices and neuromorphicunits. In addition, in this study, the polar properties of these clusters are explored,illustrating possible polar switching in metastable pure Hf6O9, low-barrier anti-ferroelectric-like switching in carbon-stabilized Hf6O9∶C, and low-barrier polarswitching in Hf10O15∶C. In thesefindings, the potential of HfOxclusters isrevealed as active components for next-generation high-capacity nonvolatileelectronic memory and beyond von Neumann computing in sub-nanometer scale.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001170508800001
DO  - DOI:10.1002/pssa.202300404
UR  - https://juser.fz-juelich.de/record/1019565
ER  -