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| Hauptseite > Publikationsdatenbank > Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon > print |
| Hauptseite > Publikationsdatenbank > Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon > print |
| 001 | 1019942 | ||
| 005 | 20240226075230.0 | ||
| 024 | 7 | _ | |a 10.48550/ARXIV.2312.07325 |2 doi |
| 024 | 7 | _ | |a 10.34734/FZJ-2023-05763 |2 datacite_doi |
| 037 | _ | _ | |a FZJ-2023-05763 |
| 100 | 1 | _ | |a Janßen, Kevin |0 P:(DE-Juel1)177774 |b 0 |
| 245 | _ | _ | |a Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon |
| 260 | _ | _ | |c 2023 |b arXiv |
| 336 | 7 | _ | |a Preprint |b preprint |m preprint |0 PUB:(DE-HGF)25 |s 1704207872_24795 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features. |
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| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 16 |e Corresponding author |u fzj |
| 773 | _ | _ | |a 10.48550/ARXIV.2312.07325 |
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