Home > Publications database > Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes > print

001     1020664
005     20250204113748.0
024 7 _ |a 10.1002/adfm.202300428
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100 1 _ |a Völkel, Lukas
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245 _ _ |a Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
260 _ _ |a Weinheim
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536 _ _ |a 5233 - Memristive Materials and Devices (POF4-523)
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536 _ _ |a BMBF 03ZU1106AA - NeuroSys: Memristor Crossbar Architekturen (Projekt A) - A (03ZU1106AA)
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700 1 _ |a Braun, Dennis
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700 1 _ |a Belete, Melkamu
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700 1 _ |a Kataria, Satender
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700 1 _ |a Wahlbrink, Thorsten
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700 1 _ |a Ran, Ke
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700 1 _ |a Kistermann, Kevin
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700 1 _ |a Mayer, Joachim
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700 1 _ |a Menzel, Stephan
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700 1 _ |a Daus, Alwin
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700 1 _ |a Lemme, Max C.
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773 _ _ |a 10.1002/adfm.202300428
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