TY - EJOUR
AU - Völkel, Lukas
AU - Braun, Dennis
AU - Belete, Melkamu
AU - Kataria, Satender
AU - Wahlbrink, Thorsten
AU - Ran, Ke
AU - Kistermann, Kevin
AU - Mayer, Joachim
AU - Menzel, Stephan
AU - Daus, Alwin
AU - Lemme, Max C.
TI - Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
PB - arXiv
M1 - FZJ-2024-00370
PY - 2023
AB - The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$.
KW - Applied Physics (physics.app-ph) (Other)
KW - Materials Science (cond-mat.mtrl-sci) (Other)
KW - FOS: Physical sciences (Other)
LB - PUB:(DE-HGF)25
DO - DOI:10.48550/ARXIV.2301.10158
UR - https://juser.fz-juelich.de/record/1020894
ER -