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@ARTICLE{Vlkel:1020894,
      author       = {Völkel, Lukas and Braun, Dennis and Belete, Melkamu and
                      Kataria, Satender and Wahlbrink, Thorsten and Ran, Ke and
                      Kistermann, Kevin and Mayer, Joachim and Menzel, Stephan and
                      Daus, Alwin and Lemme, Max C.},
      title        = {{R}esistive {S}witching and {C}urrent {C}onduction
                      {M}echanisms in {H}exagonal {B}oron {N}itride {T}hreshold
                      {M}emristors with {N}ickel {E}lectrodes},
      publisher    = {arXiv},
      reportid     = {FZJ-2024-00370},
      year         = {2023},
      abstract     = {The two-dimensional (2D) insulating material hexagonal
                      boron nitride (h BN) has attracted much attention as the
                      active medium in memristive devices due to its favorable
                      physical properties, among others, a wide bandgap that
                      enables a large switching window. Metal filament formation
                      is frequently suggested for h-BN devices as the resistive
                      switching (RS) mechanism, usually supported by highly
                      specialized methods like conductive atomic force microscopy
                      (C-AFM) or transmission electron microscopy (TEM). Here, we
                      investigate the switching of multilayer hexagonal boron
                      nitride (h-BN) threshold memristors with two nickel (Ni)
                      electrodes through their current conduction mechanisms. Both
                      the high and the low resistance states are analyzed through
                      temperature-dependent current-voltage measurements. We
                      propose the formation and retraction of nickel filaments
                      along boron defects in the h-BN film as the resistive
                      switching mechanism. We corroborate our electrical data with
                      TEM analyses to establish temperature-dependent
                      current-voltage measurements as a valuable tool for the
                      analysis of resistive switching phenomena in memristors made
                      of 2D materials. Our memristors exhibit a wide and tunable
                      current operation range and low stand-by currents, in line
                      with the state of the art in h-BN-based threshold switches,
                      a low cycle-to-cycle variability of $5\%,$ and a large
                      On/Off ratio of 10${^7}$.},
      keywords     = {Applied Physics (physics.app-ph) (Other) / Materials
                      Science (cond-mat.mtrl-sci) (Other) / FOS: Physical sciences
                      (Other)},
      cin          = {PGI-7 / PGI-10 / JARA-FIT / ER-C-2},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / BMBF
                      16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC II - (BMBF-16ME0398K)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0398K},
      typ          = {PUB:(DE-HGF)25},
      doi          = {10.48550/ARXIV.2301.10158},
      url          = {https://juser.fz-juelich.de/record/1020894},
}