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| Home > Publications database > Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes > print |
| 001 | 1020894 | ||
| 005 | 20240226075319.0 | ||
| 024 | 7 | _ | |a 10.48550/ARXIV.2301.10158 |2 doi |
| 024 | 7 | _ | |a 10.34734/FZJ-2024-00370 |2 datacite_doi |
| 037 | _ | _ | |a FZJ-2024-00370 |
| 100 | 1 | _ | |a Völkel, Lukas |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes |
| 260 | _ | _ | |c 2023 |b arXiv |
| 336 | 7 | _ | |a Preprint |b preprint |m preprint |0 PUB:(DE-HGF)25 |s 1704980508_2197 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a WORKING_PAPER |2 ORCID |
| 336 | 7 | _ | |a Electronic Article |0 28 |2 EndNote |
| 336 | 7 | _ | |a preprint |2 DRIVER |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a Output Types/Working Paper |2 DataCite |
| 520 | _ | _ | |a The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$. |
| 536 | _ | _ | |a 5233 - Memristive Materials and Devices (POF4-523) |0 G:(DE-HGF)POF4-5233 |c POF4-523 |f POF IV |x 0 |
| 536 | _ | _ | |a BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) |0 G:(DE-82)BMBF-16ME0398K |c BMBF-16ME0398K |x 1 |
| 588 | _ | _ | |a Dataset connected to DataCite |
| 650 | _ | 7 | |a Applied Physics (physics.app-ph) |2 Other |
| 650 | _ | 7 | |a Materials Science (cond-mat.mtrl-sci) |2 Other |
| 650 | _ | 7 | |a FOS: Physical sciences |2 Other |
| 700 | 1 | _ | |a Braun, Dennis |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Belete, Melkamu |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Kataria, Satender |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Wahlbrink, Thorsten |0 P:(DE-HGF)0 |b 4 |
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| 700 | 1 | _ | |a Mayer, Joachim |0 P:(DE-Juel1)130824 |b 7 |u fzj |
| 700 | 1 | _ | |a Menzel, Stephan |0 P:(DE-Juel1)158062 |b 8 |u fzj |
| 700 | 1 | _ | |a Daus, Alwin |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Lemme, Max C. |0 P:(DE-HGF)0 |b 10 |
| 773 | _ | _ | |a 10.48550/ARXIV.2301.10158 |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/1020894/files/2301.10158.pdf |
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| 914 | 1 | _ | |y 2023 |
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