%0 Electronic Article
%A Neul, Malte
%A Sprave, Isabelle V.
%A Diebel, Laura K.
%A Zinkl, Lukas G.
%A Fuchs, Florian
%A Yamamoto, Yuji
%A Vedder, Christian
%A Bougeard, Dominique
%A Schreiber, Lars R.
%T Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
%I arXiv
%M FZJ-2024-00549
%D 2023
%X Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.
%K Applied Physics (physics.app-ph) (Other)
%K Materials Science (cond-mat.mtrl-sci) (Other)
%K FOS: Physical sciences (Other)
%F PUB:(DE-HGF)25
%9 Preprint
%R 10.48550/ARXIV.2312.06267
%U https://juser.fz-juelich.de/record/1021095