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001021095 1001_ $$0P:(DE-HGF)0$$aNeul, Malte$$b0
001021095 245__ $$aLocal laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
001021095 260__ $$barXiv$$c2023
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001021095 520__ $$aSi/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.
001021095 536__ $$0G:(DE-HGF)POF4-5221$$a5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522)$$cPOF4-522$$fPOF IV$$x0
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001021095 650_7 $$2Other$$aApplied Physics (physics.app-ph)
001021095 650_7 $$2Other$$aMaterials Science (cond-mat.mtrl-sci)
001021095 650_7 $$2Other$$aFOS: Physical sciences
001021095 7001_ $$0P:(DE-Juel1)196669$$aSprave, Isabelle V.$$b1$$ufzj
001021095 7001_ $$0P:(DE-HGF)0$$aDiebel, Laura K.$$b2
001021095 7001_ $$0P:(DE-HGF)0$$aZinkl, Lukas G.$$b3
001021095 7001_ $$0P:(DE-HGF)0$$aFuchs, Florian$$b4
001021095 7001_ $$0P:(DE-HGF)0$$aYamamoto, Yuji$$b5
001021095 7001_ $$0P:(DE-HGF)0$$aVedder, Christian$$b6
001021095 7001_ $$0P:(DE-HGF)0$$aBougeard, Dominique$$b7
001021095 7001_ $$0P:(DE-Juel1)172641$$aSchreiber, Lars R.$$b8$$eCorresponding author$$ufzj
001021095 773__ $$a10.48550/ARXIV.2312.06267
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