TY  - EJOUR
AU  - Neul, Malte
AU  - Sprave, Isabelle V.
AU  - Diebel, Laura K.
AU  - Zinkl, Lukas G.
AU  - Fuchs, Florian
AU  - Yamamoto, Yuji
AU  - Vedder, Christian
AU  - Bougeard, Dominique
AU  - Schreiber, Lars R.
TI  - Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
PB  - arXiv
M1  - FZJ-2024-00549
PY  - 2023
AB  - Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.
KW  - Applied Physics (physics.app-ph) (Other)
KW  - Materials Science (cond-mat.mtrl-sci) (Other)
KW  - FOS: Physical sciences (Other)
LB  - PUB:(DE-HGF)25
DO  - DOI:10.48550/ARXIV.2312.06267
UR  - https://juser.fz-juelich.de/record/1021095
ER  -