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@ARTICLE{Neul:1021095,
      author       = {Neul, Malte and Sprave, Isabelle V. and Diebel, Laura K.
                      and Zinkl, Lukas G. and Fuchs, Florian and Yamamoto, Yuji
                      and Vedder, Christian and Bougeard, Dominique and Schreiber,
                      Lars R.},
      title        = {{L}ocal laser-induced solid-phase recrystallization of
                      phosphorus-implanted {S}i/{S}i{G}e heterostructures for
                      contacts below 4.2 {K}},
      publisher    = {arXiv},
      reportid     = {FZJ-2024-00549},
      year         = {2023},
      abstract     = {Si/SiGe heterostructures are of high interest for high
                      mobility transistor and qubit applications, specifically for
                      operations below 4.2 K. In order to optimize parameters such
                      as charge mobility, built-in strain, electrostatic disorder,
                      charge noise and valley splitting, these heterostructures
                      require Ge concentration profiles close to mono-layer
                      precision. Ohmic contacts to undoped heterostructures are
                      usually facilitated by a global annealing step activating
                      implanted dopants, but compromising the carefully engineered
                      layer stack due to atom diffusion and strain relaxation in
                      the active device region. We demonstrate a local laser-based
                      annealing process for recrystallization of ion-implanted
                      contacts in SiGe, greatly reducing the thermal load on the
                      active device area. To quickly adapt this process to the
                      constantly evolving heterostructures, we deploy a
                      calibration procedure based exclusively on optical
                      inspection at room-temperature. We measure the electron
                      mobility and contact resistance of laser annealed Hall bars
                      at temperatures below 4.2 K and obtain values similar or
                      superior than that of a globally annealed reference samples.
                      This highlights the usefulness of laser-based annealing to
                      take full advantage of high-performance Si/SiGe
                      heterostructures.},
      keywords     = {Applied Physics (physics.app-ph) (Other) / Materials
                      Science (cond-mat.mtrl-sci) (Other) / FOS: Physical sciences
                      (Other)},
      cin          = {PGI-11},
      cid          = {I:(DE-Juel1)PGI-11-20170113},
      pnm          = {5221 - Advanced Solid-State Qubits and Qubit Systems
                      (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5221},
      typ          = {PUB:(DE-HGF)25},
      doi          = {10.48550/ARXIV.2312.06267},
      url          = {https://juser.fz-juelich.de/record/1021095},
}