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| Home > Publications database > Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K > print |
| Home > Publications database > Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K > print |
| 001 | 1021095 | ||
| 005 | 20240226075332.0 | ||
| 024 | 7 | _ | |a 10.48550/ARXIV.2312.06267 |2 doi |
| 024 | 7 | _ | |a 10.34734/FZJ-2024-00549 |2 datacite_doi |
| 037 | _ | _ | |a FZJ-2024-00549 |
| 100 | 1 | _ | |a Neul, Malte |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K |
| 260 | _ | _ | |c 2023 |b arXiv |
| 336 | 7 | _ | |a Preprint |b preprint |m preprint |0 PUB:(DE-HGF)25 |s 1705316078_12707 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a WORKING_PAPER |2 ORCID |
| 336 | 7 | _ | |a Electronic Article |0 28 |2 EndNote |
| 336 | 7 | _ | |a preprint |2 DRIVER |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a Output Types/Working Paper |2 DataCite |
| 520 | _ | _ | |a Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures. |
| 536 | _ | _ | |a 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) |0 G:(DE-HGF)POF4-5221 |c POF4-522 |f POF IV |x 0 |
| 588 | _ | _ | |a Dataset connected to DataCite |
| 650 | _ | 7 | |a Applied Physics (physics.app-ph) |2 Other |
| 650 | _ | 7 | |a Materials Science (cond-mat.mtrl-sci) |2 Other |
| 650 | _ | 7 | |a FOS: Physical sciences |2 Other |
| 700 | 1 | _ | |a Sprave, Isabelle V. |0 P:(DE-Juel1)196669 |b 1 |u fzj |
| 700 | 1 | _ | |a Diebel, Laura K. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Zinkl, Lukas G. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Fuchs, Florian |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Yamamoto, Yuji |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Vedder, Christian |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Bougeard, Dominique |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Schreiber, Lars R. |0 P:(DE-Juel1)172641 |b 8 |e Corresponding author |u fzj |
| 773 | _ | _ | |a 10.48550/ARXIV.2312.06267 |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/1021095/files/2312.06267.pdf |
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| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)196669 |
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| 914 | 1 | _ | |y 2023 |
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| 920 | _ | _ | |l yes |
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| 980 | _ | _ | |a preprint |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
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