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@ARTICLE{Ge:1021207,
      author       = {Ge, Bangzhi and Li, Chao and Lu, Weiqun and Ye, Haolin and
                      Li, Ruoyan and He, Wenke and Wei, Zhilei and Shi, Zhongqi
                      and Kim, Dasol and Zhou, Chongjian and Zhu, Menghua and
                      Wuttig, Matthias and Yu, Yuan},
      title        = {{D}ynamic {P}hase {T}ransition {L}eading to {E}xtraordinary
                      {P}lastic {D}eformability of {T}hermoelectric {S}n{S}e 2
                      {S}ingle {C}rystal},
      journal      = {Advanced energy materials},
      volume       = {13},
      number       = {27},
      issn         = {1614-6832},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2024-00648},
      pages        = {2300965},
      year         = {2023},
      cin          = {PGI-10},
      ddc          = {050},
      cid          = {I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000995177800001},
      doi          = {10.1002/aenm.202300965},
      url          = {https://juser.fz-juelich.de/record/1021207},
}