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| Hauptseite > Publikationsdatenbank > Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding > print |
| Hauptseite > Publikationsdatenbank > Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding > print |
| 001 | 1021209 | ||
| 005 | 20240226075340.0 | ||
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| 037 | _ | _ | |a FZJ-2024-00650 |
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| 100 | 1 | _ | |a Yu, Yuan |0 0000-0002-3148-6600 |b 0 |
| 245 | _ | _ | |a Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding |
| 260 | _ | _ | |a Weinheim |c 2023 |b Wiley-VCH |
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| 700 | 1 | _ | |a Zhou, Chongjian |b 1 |
| 700 | 1 | _ | |a Ghosh, Tanmoy |b 2 |
| 700 | 1 | _ | |a Schön, Carl-Friedrich |b 3 |
| 700 | 1 | _ | |a Zhou, Yiming |b 4 |
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| 700 | 1 | _ | |a Wuttig, Matthias |0 P:(DE-Juel1)176716 |b 11 |e Corresponding author |
| 773 | _ | _ | |a 10.1002/adma.202300893 |g Vol. 35, no. 19, p. 2300893 |0 PERI:(DE-600)1474949-X |n 19 |p 2300893 |t Advanced materials |v 35 |y 2023 |x 0935-9648 |
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