Hauptseite > Publikationsdatenbank > Non-idealities and Design Solutions for Analog Memristor-Based Content-Addressable Memories > print |
001 | 1021427 | ||
005 | 20250203103456.0 | ||
037 | _ | _ | |a FZJ-2024-00724 |
041 | _ | _ | |a English |
100 | 1 | _ | |a Manea, Paul |0 P:(DE-Juel1)192242 |b 0 |e Corresponding author |
111 | 2 | _ | |a 18th ACM International Symposium on Nanoscale Architectures |c Dresden |d 2023-12-18 - 2023-12-20 |w Germany |
245 | _ | _ | |a Non-idealities and Design Solutions for Analog Memristor-Based Content-Addressable Memories |
260 | _ | _ | |c 2023 |
300 | _ | _ | |a 6 |
336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1710310537_1593 |2 PUB:(DE-HGF) |
520 | _ | _ | |a Memristor-based analog Content Addressable Memories (aCAMs)offer robust parallel pattern look-up capabilities, significantly en-hancing the scope of In-Memory Computing applications. Thispaper presents challenges of these analog circuits, which may oc-cur during the inference, and proposes solutions to overcome them.Precisely, we investigate the impact of temperature-dependent be-havior, CMOS process variations and memristor telegraph readnoise. We demonstrate that one challenging issue affecting memris-tors analog computing applications, namely telegraph read noise, isnot a significant problem in aCAM. We introduce a framework thataccounts for these combined distortions to define variability-awareaCAM windows and estimate the bit resolution of a CAM cell. Usingthis framework we estimate the bit resolution to 2 bits before apply-ing compensating measures and to 4 bits afterwards. We study howvariations affect the inference accuracy of the IRIS classificationdataset using our novel torchCAM model. We introduce a stream-lined aCAM design featuring a memristor comparator for simplifiedinput-to-reference comparison and a novel cell architecture withtwo symmetrical memristor comparator units. |
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536 | _ | _ | |a 5233 - Memristive Materials and Devices (POF4-523) |0 G:(DE-HGF)POF4-5233 |c POF4-523 |f POF IV |x 1 |
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700 | 1 | _ | |a Sudarshan, Chirag |0 P:(DE-Juel1)198888 |b 1 |
700 | 1 | _ | |a Cüppers, Felix |0 P:(DE-Juel1)173924 |b 2 |
700 | 1 | _ | |a Strachan, John Paul |0 P:(DE-Juel1)188145 |b 3 |
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