%0 Conference Paper
%A Zhao, Qing-Tai
%T Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures
%M FZJ-2024-00969
%D 2023
%X Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics. In this presentation, we will discuss our research on Si and GeSn nanowire GAA FETs, with a particular emphasis on their steep slope switching at cryogenic temperatures. Our study has significant implications for the development of cryogenic computing applications.
%B International Cooperation On Semiconductors Workshop
%C 26 Apr 2023 - 28 Apr 2023, Grenoble (France)
Y2 26 Apr 2023 - 28 Apr 2023
M2 Grenoble, France
%F PUB:(DE-HGF)6
%9 Conference Presentation
%U https://juser.fz-juelich.de/record/1021729