TY  - CONF
AU  - Zhao, Qing-Tai
TI  - Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures
M1  - FZJ-2024-00969
PY  - 2023
AB  - Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics. In this presentation, we will discuss our research on Si and GeSn nanowire GAA FETs, with a particular emphasis on their steep slope switching at cryogenic temperatures. Our study has significant implications for the development of cryogenic computing applications.
T2  - International Cooperation On Semiconductors Workshop
CY  - 26 Apr 2023 - 28 Apr 2023, Grenoble (France)
Y2  - 26 Apr 2023 - 28 Apr 2023
M2  - Grenoble, France
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/1021729
ER  -